| 1. | Large amount of hydrogen was disadvantage to the basal plane orientation , but it is helpful for the c axis paralleling to the substrate
大量h的存在不利于基面平行衬底的取向的发生，但能够满足c轴平行衬底的条件（在一定偏压下） 。
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| 2. | On the other hand , certain amount of ar is benefit for the basal plane orientation , which is similar to what observed in mwecr cvd ~ & bn ~ i , the deposition of al
一定量的ar有利于产生基面平行衬底的取向，这与其他沉积al的实验一致。气体对取向的影响可能与物理轰击作用和相变时的过饱和度均有关系。
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| 3. | 2 we studied the films with raman polarization spectrum . the peak intensity in the polarization spectrum of the films with basal plane not oriented on the substrate changes with the polarization condition
张生仅北京工业大学博士学位论文摘要2利用raman偏振光谱研究了薄膜的性质，对基面非平行衬底的取向， raman谱随偏振条件的不同而变化。
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| 4. | E ) with the help of pecvd , we found that high substrate temperature is advantage to the basal plane orientation . higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly
E ）高温有利于基面平行于衬底的取向，在高的生长温度下吸附于衬底表面的沉积粒子能够迅速迁移到二维核的位置，并使粒子有足够能量调整位置。
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| 5. | C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films . low bias is helpful for the basal plane orientation , while under high bias the films shows that the c axis of bn was nearly parallel to the substrate
C ）偏压或离子轰击对取向有重要影响，低偏压有利于形成基面对衬底平行的取向，而在高偏压下，薄膜表现为c轴平行衬底的取向。
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| 6. | The diffusion welding behavior of single - crystalline cu to single - crystalline - aio with a nb film interlayer and the joint microstructure properties were studied by tem , sem / eds analyses and four - point bend testing . the nb film interlayer deposited by electron beam evaporation on the ceramic side prior to diffusion welding was found to be olycrytalline and fiber - textured after diffusion bonding , with the close - packed plane ( 110 ) being parallel to the ( 0001 ) basal plane of - aio
扩散连接技术是一门边缘科学，涉及材料、扩散、相变、界面反应、接头应力应变等各种行为，工艺参数多，虽然已经进行了大量的试验研究，但却对各种材料的连接机理尚未有明确的认识，为此人们试图借助于计算技术，对接头行为进行数值模拟，以便找到共同规律，对扩散连接过程及质量进行预测与实时控制。
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